Module Handbook

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Course MAT-81-35-K-7

Mathematical Models for Semiconductor Devices (2V, 4.5 LP)

Course Type

SWS Type Course Form CP (Effort) Presence-Time / Self-Study
2 V Lecture 4.5 CP 28 h 107 h
(2V) 4.5 CP 28 h 107 h

Basedata

SWS 2V
CP, Effort 4.5 CP = 135 h
Position of the semester 1 Sem. irreg.
Level [7] Master (Advanced)
Language [EN] English
Lecturers
+ further Lecturers of the department Mathematics
Area of study [MAT-TEMA] Industrial Mathematics
Additional informations
Livecycle-State [NORM] Active

Contents

Microscopic and macroscopic models in the hierarchy of models for semiconductors are derived and explained. Both, classical and quantum mechanical approaches for ultra-small components are considered. In particular, the focus is on:
  • fundamentals of Semiconductor Physics: charge transport, interactions, electrostatics,
  • microscopic models: Newton, Liouville and Fokker-Planck equations, Schrödinger equations,
  • classical macroscopic models: drift-diffusion equations, hydrodynamic models, energy transport systems,
  • macroscopic quantum models: Madelung transformation, quantum drift diffusion, quantum energy transport.

Literature

  • P. Markowich, Ch. Ringhofer, Ch. Schmeiser: Semiconductor Equations,
  • A. Jüngel: Quasi-hydrodynamic Semiconductor Equations,
  • S. Selberherr: Analysis and Simulation of Semiconductor Devices.

Materials

Further literature will be announced in the lecture.

Requirements for attendance (informal)

Modules:

Requirements for attendance (formal)

None

References to Course [MAT-81-35-K-7]

Module Name Context
[MAT-81-35-M-7] Mathematical Models for Semiconductor Devices P: Obligatory 2V, 4.5 LP